advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 18v capable of 2.5v gate drive r ds(on) 25m low drive current i d 35a surface mount package description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =125 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c thermal resistance junction-case max. 2.5 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice 200723011 AP9916GH/j pb free plating product parameter rating drain-source voltage 18 gate-source voltage continuous drain current, v gs @ 4.5v 35 continuous drain current, v gs @ 4.5v 16 pulsed drain current 1 90 total power dissipation 50 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.4 thermal data parameter storage temperature range the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 8 g d s to-252 g d s g d s to-251
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 18 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.03 - v/ r ds(on) static drain-source on-resistance v gs =4.5v, i d =6a - - 25 m v gs =2.5v, i d =5.2a - - 40 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1 v g fs forward transconductance v ds =10v, i d =6a - 18 - s i dss drain-source leakage current (t j =25 o c) v ds =18v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =18v ,v gs =0v - - 250 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =18a - 17.5 - nc q gs gate-source charge v ds =18v - 1.2 - nc q gd gate-drain ("miller") charge v gs =5v - 7.9 - nc t d(on) turn-on delay time 2 v ds =10v - 7.3 - ns t r rise time i d =18a - 98 - ns t d(off) turn-off delay time r g =3.3 , v gs =5v - 25.6 - ns t f fall time r d =0.56 -98- ns c iss input capacitance v gs =0v - 527 - pf c oss output capacitance v ds =18v - 258 - pf c rss reverse transfer capacitance f=1.0mhz - 112 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 35 a i sm pulsed source current ( body diode ) 1 --90 a v sd forward on voltage 2 t j =25 , i s =35a, v gs =0v - - 1.3 v notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. AP9916GH/j 8v 100
AP9916GH/j fig 1. typical output characteristics fig 2. typical output characteristics v.s. junction temperature 0 20 40 60 80 100 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =1.5v v g =2.5v v g =4.5v v g =3.5v 0 10 20 30 40 50 60 70 80 012345678 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =1.5v v g =2.5v v g =3.5v v g =4.5v 18 20 22 24 26 28 30 123456 v gs (v) r dson (m ) i d =6a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =4.5v i d =6a
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature AP9916GH/j 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse 0 10 20 30 40 50 60 0 50 100 150 t c , case temperature ( o c) p d (w) 0.1 1 10 100 1000 0.1 1 10 100 v ds (v) i d (a) d =0.01 t c =25 o c 10us 1ms 10ms 100ms 100us 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a)
AP9916GH/j fig 9. gate charge characteristics fig 10. typical capacitance characteristics reverse diode junction temperature 0.2 0.45 0.7 0.95 1.2 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd (v) i s (a) t j =25 o c t j =150 o c 10 100 1000 1 5 9 13 17 21 25 v ds (v) c (pf) f =1.0mhz ciss coss crss 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =15v v ds =18v v ds =10v
AP9916GH/j fig 13. switching time circuit fig 14. switching time waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 5 v d g s v ds v gs r g r d rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 m a
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